Y‐stabilized ZrO₂ as a promising wafer material for the epitaxial growth of transition metal dichalcogenides

We use Y-stabilized ZrO2 (YSZ) as a promising single-crystal wafer material for the epitaxial growth of transition metal dichalcogenides applicable both physical (PVD) and chemical vapor deposition (CVD) processes. MoS2 layers grown on YSZ (111) exhibit 6-fold symmetry in-plane relationship with (1010) || (211) YSZ. The PVD sub-monolayer thin films show nucleation islands lateral size up to 100 nm preferential alignment along substrate step edges. strong photoluminescence yield expected 2H-phase in single monolayer limit. CVD samples are composed triangular several micrometer presence antiparallel domains. results represent route towards fabrication wafer-scale crystalline dichalcogenide tunable layer thickness commercially available wafers. This article is protected by copyright. All rights reserved.